zsztnl-donauekoi ipioducti, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUV18 buv19 npn high curent switching transistors 25 15(0.99) 2667(1 05) 1067(042) 11 18(044) 3 (cas.) 6,35 (0.25) 9,15(036) 792(0312) 1270(0.50) designed for high energy applications requiring robust fast switching devices features ? fast switching ? lowvce(sat) ? high switching currents ? high reliability ? military options available pin 1 - gate to-3 (to-204ae) pin 2 - drain case - source applications ? high efficiency converters ? motor drive control ? switching regulator absolute maximum ratings (tease = 25c unless otherwise stated) vcbo vceo vebo ?c 'c(pk) ib 'b(pk) ptot tstg tj r9jc collector-emitter voltage (ie=0) collector-emitter voltage (|b=o) emitter- base voltage (lc=0) collector current peak collector current base current peak base current total dissipation @ tcase = 25c storage temperature range maximum operating junction temperature thermal resistance junction - case BUV18 buv19 120v 160v 60v 80v 7v 7v 50a 50a 90a 70a 16a 12a 40a 30a 250w -65 to 200c 200c max 0.7c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
BUV18 buv19 electrical characteristics(tcase = 25c unless otherwise stated) parameter vceo(sus)* collector - emitter sustaining voltage vce(sat>* collector - emitter saturation voltage vbe(sat>* base - emitter saturation voltage v(br)ebo emitter - base breakdown voltage icex collector cut-off current oca iebo emitter cut-off current switching characteristics ft transition frequency ton turn-on time tr fall time ts storage time ton turn-on time tr fall time ts storage time test conditions ib = 0 ic = 0.2a BUV18 l = 25mh ib = 0 ic = 0.2a buv19 l - 25mh ic = 40a ib = 4a BUV18 lc = 80a ib = 8a ic = 30a ib = 3a buv19 lc = 60a ib = 6a i =80a ib = 8a BUV18 \j d lc = 60a ib = 6a buv19 lc = oa ie = 50ma vrf = -1 5v vpp =vr-fy tcase ~ 100c ic = oa veb = 5v f= 10mhz vce=15v ic=2a vcc = 60v BUV18 lc = 80a m d/l vcc = 80v buv19 lc = 60a |b1 = -|b2 = 6a min. typ. max. 60 80 0.6 1.5 0.6 1.2 2.2 2.0 7 1.0 3.0 1.0 8 1.2 1.5 0.18 0.25 0.6 1.1 0.9 1.3 0.17 0.25 0.6 1.1 unit v v v v ma mhz [is notes * pulse test: tp = soo^s, 5 < 2%
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